In the past ten years, my country’s communication industry has experienced an update iteration from 2G to 3G, and then from 3G to 4G. In 2019, the three major operators announced 5G commercial packages, officially marking the beginning of China’s entry into the 5G commercial era. The arrival of the 5G era has not only greatly improved the communication speed and efficiency, but also promoted the vigorous development of the digital economy and the upgrading of hardware equipment, and has also put forward higher requirements for signal transmission.
In the wireless communication industry, RF chips are known as the “jewel in the crown” in the field of analog chips, and play a very important role in the signal transmission process. As the core of wireless connection, it can convert radio frequency signals and digital signals, so all devices connected to the mobile Internet need radio frequency front-end chips. Specifically, the radio frequency chip includes a low noise amplifier (LNA), a radio frequency switch (RF Switch), a power amplifier (PA), a filter (Filter) and other devices.
With the leap-forward development of the communication industry, RF devices are an indispensable part of wireless communication, and the market demand is also increasing. According to data from Yole Development, the global mobile terminal RF front-end market size in 2018 It is expected to reach $25.8 billion by 2025. In the face of the rapidly growing market demand and the rapid development of my country’s 5G technology, the demand for localized replacement of RF chips is accelerating, which also provides a good opportunity for the development of my country’s RF industry chain enterprises.
As a leading analog and discrete semiconductor design company in China, Well Semiconductor, a subsidiary of OmniVision Group, has been committed to the research and development of high-performance RF devices and continues to lead the development of new RF technologies, especially in low noise amplifier (LNA), RF switch (RF Switch) , Antenna tuner (Tuner) field, has created a mature product layout. Its radio frequency products rely on the combination of new designs, new processes and new materials, breaking through traditional design ideas and providing innovative power for diversified products in the wireless communication field.
In the radio frequency device, the radio frequency switch (RF Switch) can be used to realize the switching between the receiving and transmitting of the radio frequency signal and the switching between different frequency bands. With the commercialization of 5G, the demand for signal reception and transmission in different frequency bands continues to increase, and the requirements for RF switches also increase. Weir Semiconductor has recently launched three 5G RF switching devices, HWS7804LMA, VWS7802LA, and VWS7822LE, which have the characteristics of low insertion loss and high port isolation, and can support high-frequency 6GHz applications. Signal transmission and reception effects.
The HWS7804LMA adopts RF CMOS silicon-on-insulator (SOI) technology. It is a high-power MIPI-controlled single-pole, four-throw switch suitable for wideband RF range from 0.1G-6GHZ, and is suitable for high-performance GSM, CDMA, WCDMA, LTE and 5G NR applications. Optimized for low on-resistance, low off-capacitance, and high power handling. The RF switch is set with RFFE2.1 control interface, and is packaged with 1.1mm×1.1mm 9-pin, no need to add DC blocking capacitors. With the advantages of low power consumption and small package, the HWS7804LMA can be widely used in mobile phones, cellular modems and USB devices as well as multi-mode GSM, EDEG, WCDMA, LTE and 5G NR applications.
VWS7802LA is a high-power single-pole double-throw switch optimized for 5G NR high power and high linearity, which can be widely used in 5G RF front-end.
The VWS7822LE is a double-pole, double-throw switch with high-quality linearity. Its high-quality linearity and harmonic performance are ideal for multi-mode GSM, EDGE, UMTS and LTE mobile phone applications. In terms of product design, VWS7822LE adopts a compact package size of 1.5mmx1.1mm 10pin, can work in the supply voltage range of 1.4V-4.2V, is suitable for diversified platforms and product forms, and helps designers to quickly integrate it into multi-mode In the multi-band system, it greatly meets the market demand for the complex functions of RF switches.
In addition to the above three new products, Weir Semiconductor also has almost a full range of LTE discrete receiver switches. Among them, WS7810QM (single-pole 10-throw) and WS7812QD (double-pole 12-throw) both adopt MIPI control, which can make the RF front-end to achieve the optimal layout, with low insertion loss, high isolation, high linearity, etc., and supports high-frequency applications up to 3.8GHz , and has a large number of mass production experience, the packaging reliability is effectively guaranteed. Both products are designed for application scenarios such as mobile phones, cellular communication modules, and data cards.
In addition, Weil Semiconductor also launched two products, WS7854QA and WS7872DA, respectively in 2019. The WS7854QA is a single-pole, four-throw switch with ESD protection, optimized for 3G/4G RF path and diversity applications, and has the advantages of high linearity and low insertion loss. Medium power requirements have been widely used in WCDMA/LTE mobile phones and data card applications, which can provide longer battery life for mobile devices such as mobile phones and tablet computers. In terms of product packaging, WS7854QA adopts a 1.1×1.1 mm? compact quad flat no-lead (QFN) package structure, which eliminates the space-consuming external leads protruding laterally outside the package, and effectively improves the connection reliability during packaging.
The WS7872DA is a single-pole, double-throw (SPDT) switch. The operating frequency of this product can be as high as 6GHz, and has the advantages of high linearity, low insertion loss, and fast switching time. The WS7872DA is housed in a compact 1.0 x 1.0 mm² dual flat no-lead (DFN) package with very low power consumption, making it ideal for WLAN applications such as 802.11 a/b/g/.
In addition to RF switching products, Weir Semiconductor also has a line of Low Noise Amplifier (LNA) products. Different from the RF switch that controls the signal channel conversion, the low noise amplifier (LNA) can amplify the weak RF signal received and minimize the introduction of noise to achieve a good signal-to-noise ratio. WS7932DE is the 3rd generation LTE LNA product developed by Weir Semiconductor. It adopts the COMS process to achieve a high gain of 18dB, which effectively improves the receiving sensitivity of the system, and greatly improves the output signal-to-noise ratio with a low noise figure of 0.8dB. At the same time, WS7932DE adopts the industry’s common 1.1mm X 0.7mm small size package, which is compatible with mainstream models and facilitates debugging and replacement. It not only saves valuable internal space for product design, but also helps to speed up product launch.
Nowadays, people have gradually realized the important role of “Chinese chip” substitution in technological competition. With the leap-forward development of 5G technology and the communication industry, the importance of radio frequency devices has become more and more prominent. With its forward-looking technology research and development, based on more than ten years of technology accumulation and independent technology architecture and process innovation, Will Semiconductor has independently developed RF front-end solutions that can widely cover the mobile phone and communication module market, WiFi router market and communication base station market. Facing the 5G era, Weil Semiconductor will also continue to focus on technological innovation, promote the “Chinese chip” from following to leading, from domestic substitution to going hand in hand, and join hands with the industry to develop 5G in China and the world.