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not recommended for new design Features: N channel, homogeneous Silicon structure (NPT- Non punch through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also above 10 kHz SKM100GB063D
IGBT Array & Module Transistor Dual N Channel 130 A 2.1 V 600 V Module
